| Titre : | Simulation of CZTS-based thin-film solar cells (Simulation des cellules solaires en couches minces à base de CZTS) |
| Auteurs : | Sonia Bouslit, Auteur ; Noureddine Sengouga, Directeur de thèse |
| Type de document : | Thése doctorat |
| Editeur : | Biskra [Algérie] : Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie, Université Mohamed Khider, 2024 |
| Format : | 1 vol. (84 p.) / ill., couv. ill. en coul / 30 cm |
| Langues: | Anglais |
| Mots-clés: | solar cells, thin-film, SCAPS numerical simulation, defects |
| Résumé : |
Cu2ZnSnS4 (CZTS), is a quaternary semiconductor of the thin film with a direct band-gap, has a gap of 1.6-1.4 eV with a large absorption coefficient of 104 cm-1, a film absorber with very beneficial properties, in addition to its low production cost. In this work, the effect of many parameters of the absorber layer on the performance of a CZTS solar cell is investigated using the numerical simulation program SCAPS-1D. Also the effect of defects type (donor and acceptor) deep in the band gap of the CZTS was studied. The series and shunt resistances and the interface defects between layer P and layer N were also considered. The effect of the band-gap of energy, thickness, acceptor density and electron affinity were also highlighted. The performance of the solar cell was studied in terms of the short circuit current Jsc, the open-circuit voltage Voc, the fill factor FF, and the efficiency ɳ. It was found that when volume defects are considered in the CZTS absorber layer, better results were obtained but not as expected; only the short circuit current is reproduced. On the other hand, interface states are considered between CZTS and CdS give good agreement of the open circuit voltage. The series and shunt resistance lead to a better agreement of the fill factor. Only when all these are considered together that experimental measurements are reproduced. |
| Sommaire : |
ACKNOWLEDGMENTS ABSTRACT LIST OF FIGURES......I LIST OF TABLES.IV LIST OF SYMBOLS AND ABBREVIATION.....V General introduction.....1 Chapter I. Solar cells ...5 I.1. Introduction ... 5 I.2. Semiconductors .5 I.3. Different types of doping ............................. 6 I.3.1. N-doped semiconductors ........................ 6 I.3.2. P-doped semiconductors .............. 6 I.4. The p-n junction ................................................. 6 I.5. Characteristic parameters of a photovoltaic cell ........ I.5.1. Short circuit current Isc ..................................... 10 I.5.2. Open circuit voltage in Voc .................. 10 I.5.3. Fill factor FF ........................................... 10 I.5.4. Energy conversion efficiency ɳ ............................................. 10 I.6. Series and parallel (shunt) resistances RS and Rshunt .................. 10 I.7. Photovoltaic cell technologies ................... 11 I.7.1. First generation (silicon-based) .......................................... 11 I.7.2. Second generation (non-silicon- based, thin film) ........... 13 I.7.3. Third generation (new emerging technology) ....................... 15 I.8. Photovoltaic solar cell based on CZTS .................... 17 I.8.1. Solar cell structures ................................. 18 I.8.2. Crystal Structure ........................... 19 I.8.3. Affinity ............................................................ 23 I.8.4. Band structure (the conduction band Offset CBO) ............... 23 I.9. Crystal defects ....................................................... 24 I.9.1. Point defects ......................................... 24 I.9.2. Line defect ............................................ 26 I.9.3. Planer defects (Surface defects) ............................... 27 I.9.4. Volume defect ............................................................. 29 I.10. CZTS defect ......................................................... 29 REFERENCES ......................................................... 54 Chapter II. Numerical Simulation by SCAPS ....................... II.1. Introduction ................................................................ 36 II.2. Program Overview .................................................... 36 II.3. The beginning ................................................ 38 II.4. Select the Measurement(s) to Simulate .......................... 39 II.5. Shunt and series resistances .................................. 40 II.6. Start the calculation(s) .................................................... 40 II.7. Solar Cell Definition ........................................................ 41 II.7.1. Editing a Solar Cell Structure .............. 41 II.7.2. Contact ............................................... 43 II.7.3. Defects and Recombination .............................. 44 II.7.4. Interfaces .......................................................... 46 II.8. Result Analysis ....................................... 46 II.8.1. Navigation to the Analysis ........................................... 46 II.8.2. Zooming and Scaling ............................. 47 II.8.3. The IV-Panel ....................................................... 48 II.9. The batch set-up panel ......................................... 49 II.9.1. Custom defined values ....................... 50 II.10. Recorder Calculations ..................... 51 II.10.1. Setting a Recorder ............................... 51 II.10.2. Recorder Calculations ............................ 52 II.10.3. Analyzing the Recorder Results ........................ 53 REFERENCES ................................................... 54 Chapter III. Results and Discussion .......... 56 III.1. Introduction ............................. 56 III.2. Ideal solar cell................................... 56 III.3. Effect of deep donor and a deep acceptor defect ................. 58 III.3.1. Effect of deep donor and a deep acceptor defect without parasitic resistances58 III.3.2. Effect of deep donor and a deep acceptor defect with parasitic resistances ............ 60 III.4. Effect of interface state ............................ 61 III.5. Effect of buffer layer .................. 62 III.6. Effect of CZTS absorber layer .................. 66 III.6.1. Effect of CZTS layer affinity ...................... 66 III.6.2. Effect of CZTS band gap energy Eg III.6.3. Effect of CZTS thickness .......................... 70 III.6.4. Effect of the concentration of the Na absorber layer of CZTS ......... 72 III.6.5. Effect of defect in CZTS ................. 74 III.7. Influence of CZTS / ZnS interface defect ............. 79 REFERENCES ..................... 81 General conclusion........ 84 |
Disponibilité (1)
| Cote | Support | Localisation | Statut |
|---|---|---|---|
| TPHY/139 | Théses de doctorat | bibliothèque sciences exactes | Consultable |
