| Titre : | Investigation of solar cell devices based on Indium Gallium Nitride (InGaN) ternary alloy |
| Auteurs : | Amina Benslim, Auteur ; Afak Meftah., Directeur de thèse ; Amjad Meftah, Directeur de thèse |
| Type de document : | Monographie imprimée |
| Editeur : | Biskra [Algérie] : Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie, Université Mohamed Khider, 2022 |
| Format : | 1 vol. (161 p.) / couv. ill. en coul / 30 cm |
| Langues: | Anglais |
| Mots-clés: | InGaN alloy, Solar cell, Numerical modeling, Conversion efficiency |
| Résumé : |
The indium gallium nitride (InGaN) alloy offer a great possibility of designing and fabricating ultra-high efficiency solar cells due to its wide range of direct band gaps, strong absorption and other optoelectronic properties. This work is numerical simulation using Silvaco Atlas software to study InGaN-based Schottky barrier solar cell. First, we focused on the suitable parameters including the indium composition and the metal work function that gives the best performances, followed by the study of the appropriate metals among Pt, Ni, Au and Pd to form a Schottky junction with InGaN. Optimizations we have made to the InGaN-based Schottky barrier solar cell are divided into two steps. The first one consists of adding an intrinsic layer (with the same concentration of indium as the doped region) between the semiconductor and the metal. We study the effect of the thickness of this layer and the effect of defects on the output parameters of the solar cell. Then, the uniform intrinsic layer is replaced by a gradual one in terms of indium composition. We found that the gradual intrinsic layer, even in the presence of defects, provides the best performance. In the second step of the optimizations, between the metal and the semiconductor was inserted an oxide layer and several oxides was studied: SiO2, Al2O3 and HfO2, including the effect of negative fixed charge density and the permittivity. |
| Sommaire : |
Acknowledgement.....i Dedication Abstract .iv Table of Contents.......v List of figures ... viii List of tables .....xi General Introduction1 Chapter I: Schottky barrier solar cell and InGaN material...5 I.1. Introduction ...6 I.2. Basics of Schottky barrier junction .6 I.2.1 Under equilibrium condition.....7 I.2.2. Effect of biasing.....8 I.2.3. Current-Voltage characteristics..9 I.2.4. Effect of traps in schottky junctions 12 I.3. Schottky barrier solar cell...12 I.3.1. Working principle .13 I.3.2 Characteristics of a Solar Cell 4 I.3.3 Suitable materials for Schottky electrodes..15 I. 3.4 MIS (Metal-Insulator-Semiconductor) solar cell...17 I.4 InGaN for solar cells .18 I.4.1 InGaN material properties....18 I.4.2 Growth techniques ..25 I.4.3 Challenges of InGaN alloys...26 I.4.4 Studied InGaN-based solar cell structures.29vi Chapter II: Silvaco Atlas Simulation Software .......30 II.1 Introduction .31 II.2 Device modeling ...32 II.2.1 Basic semiconductor equations ..32 II.2.2 Numerical methods..33 II.3 Deckbuild ...34 II.4 Definition of the structure ....36 II.4.1 Specifying mesh ...36 II.4.2 Specifying regions ...37 II.4.3 Specifying electrodes.........39 II.4.4 Specifying doping...39 II.5 Definition of material parameters and models .......40 II.5.1 Specifying material properties..40 II.5.2 Specifying physical models...41 II.5.3 Specifying contact characteristics 41 II.5.4 Specifying interface properties...42 II.6 The choice of the numerical method...42 II.7 Obtaining solutions ...43 II.8 Interpreting results .44 II.9 Luminous....45 II.10 Solar cell simulation..46 II.11 Tonyplot .48 II.11.1 2D Mesh plot ..48 11.2 X-Y plots...50 Chapter III: Results and discussions .52 III.1 Introduction..53 III.2. Device structure and modelling 53 III.3 Initial study to determine the suitable parameters of the solar III.3.1 Part 1 .55 III.3.2 Part 2 .60 III.4 Optimizations63vii III.4.1 Adding a uniform Intrinsic Layer.63 III.4.2 The effect of interfacial layer defect64 III.4.3 Adding gradual intrinsic layer..66 III.4.4 Influence of an insulating layer on the Schottky solar cell 0 III.4.5 Changing the Schottky solar cell to a MIS solar cell III.5. Summary.....76 General Conclusion .78 References.80 Publications and conferences...90 |
| En ligne : | http://thesis.univ-biskra.dz/5873/1/Thesis%20%28Amina%20Benslim%29.pdf |
Disponibilité (1)
| Cote | Support | Localisation | Statut |
|---|---|---|---|
| TPHY/122 | Théses de doctorat | bibliothèque sciences exactes | Consultable |
