| Titre : | Study of Schottky barrier solar cell based on Cu(In, Ga) |
| Auteurs : | Ben Dagga Kamilia, Auteur ; Amjad Meftah, Directeur de thèse |
| Type de document : | Monographie imprimée |
| Editeur : | Biskra [Algérie] : Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie, Université Mohamed Khider, 2022 |
| Format : | 1 vol. (79 p.) |
| Langues: | Anglais |
| Résumé : |
We have investigated a Schottky barrier solar cell based on n-type CIGS material. The anode metal; situated on the top of the cell, satisfy the Schottky contact condition.The cathode (Al), however, is defined to be Ohmic contact. Two samples were investigated; in the sample (A), the cathode is situated on the bottom of the cell, and in sample (B), the two cathode electrodes are located on the top of the cell. With using platinum (Pt) as anode metal ( |
| Sommaire : |
Acknowledgement……………………….II Dedication……………………………….III Abstract…...........IV List of figures........V List of tables……………………….VIII List of symbols……………………IX General introduction….......1 ChapterⅠ: Photovoltaic and solar cells Ⅰ.1.Introduction………….3 Ⅰ.2.Photovoltaic effect……………………….3 Ⅰ.2.1.PN junction…………….3 Ⅰ.2.2.Solar cells……….6 Ⅰ.2.3.Solar radiation..………………….7 Ⅰ.2.4.Characteristics of a PN junction solar cell…………………………………...8 Ⅰ.2.5.Equivalent electrical circuit of a solar cell………………….………..……..10 Ⅰ.2.6.Figures of merit of a solar cell………………………….………..……….…11 Ⅰ.2.6.1.Short circuit current (Isc)…………….……….……….…………..…..12 Ⅰ.2.6.2.Open-circuit voltage (Voc)………………………………….………...…12 Ⅰ.2.6.3.The maximum power (Pmax)……………………………………..….….12 Ⅰ.2.6.4.Fill factor (FF)…………………………………………………………...12 Ⅰ.2.6.5.Power conversion efficiency (η)……………………………………...….13 Ⅰ.2.6.6.The quantum efficiency………………………………………….…..…..13 Ⅰ.3.Schottky barrier solar cell………………………………...……….……………14 XII Ⅰ.4.Generations of solar cells……………….…………………………….……….20 Ⅰ.4.1.First Generation solar cells………………………….………………….....…20 Ⅰ.4.2.Second Generation solar cells……………….………………….…….……20 Ⅰ.4.3.Third Generation solar cells………………………………………….…….21 Ⅰ.4.4.Fourth-generation solar cells………………………………………….........21 Ⅰ.5.Diffirent types of solar cells……………………….21 Ⅰ.5.1.Silicon semiconductor type solar cells…………………………….21 Ⅰ.5.1.1.Monocrystalline solar cell……………………………….22 Ⅰ.5.1.2.Polycrystalline solar cell………….22 Ⅰ.5.1.3.Amorphous solar cell……………………….23 Ⅰ.5.2.Other types of solar cell………………………….23 Ⅰ.6.Thin film solar cells ………………….23 Chapter Ⅱ: CIGS-based solar cells Ⅱ.1.Introduction………………………….25 II.2.CIGS material properties..……… …………………25 II.2.1.Structural and Compositional Properties…….……….25 II.2.2.Optical Properties and Band Gap Grading………...…………27 II.3.The conventional (standard) CIGS solar cell structure…………….……29 II.4.Schottky barrier solar cell based on CIGS material…………………………31 Chapter III : Silvaco-Atlas Software III.1.Introduction………………………………33 III.2.Numerical modelling software SILVACO-ATLAS…………………33 III.3.DECKBUILD…………………………34 III.4. Main steps of the numerical simulation of Schottky barrier solar cell based on CIGS material using Silvaco-Atlas……………………36 III.4.1.Building the device……………………36 III.4.2.Defining the Structure…………………………37 XIII III.4.3.Regions………………………38 III.4.4.Electrodes………………………39 III.4.5. Doping……………………………41 III.4.6.Modifying Parameters …………………………41 III.4.7.Numerical Solutions………………………41 III.4.8.Obtaining Solutions……………………42 III.4.9.Results………………………43 III.4.10.Tonyplot…………………………43 III.4.11.Luminous………………………………44 III.4.12.Solar cell simulation…………………………44 Chapter IV :Study Of Schottky Barrier Solar Cell Based On CIGS Material IV.1.Introduction……………………………47 IV.2. Description of the studied Schottky barrier solar cell based on CIGS…....….47 IV.3.Schottky Contact and the Universal Schottky Tunneling (UST) Model….......53 IV.4. Results and discussion……………..54 IV.5.Conclusion…………………65 General conclusion……………………67 References…………………….70 Abstract……. ……………….79 |
Disponibilité (1)
| Cote | Support | Localisation | Statut |
|---|---|---|---|
| MPHY/599 | Mémoire master | bibliothèque sciences exactes | Empruntable |
