| Titre : | Improvement of a Solar Cell Performance by Introducing Defects (Amélioration des performances d’une cellule solaire en introduisant des défauts |
| Auteurs : | Djemaa Attafi, Auteur ; Noureddine Sengouga, Directeur de thèse ; Amjad Meftah, Directeur de thèse |
| Type de document : | Monographie imprimée |
| Editeur : | Biskra [Algérie] : Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie, Université Mohamed Khider, 2022 |
| Format : | 1 vol. (130 p.) / couv. ill. en coul / 30 cm |
| Langues: | Anglais |
| Résumé : |
In this work, we investigated the tunnel oxide passivated contact (TOPCon) solar cell based on ntype Si (p-n-n+ structure), and p-type Si (n-p-p+ structure), respectively. We started by the study of a p-n single junction device. Then, we investigated the p-n-n+ configuration in which an n+ polysilicon layer is added as back-surface field (BSF) layer. Thereafter, the tunnel oxide passivated contact (TOPCon) cell was studied. This latter includes a wide bandgap (nitride or oxide) passivation layer (PL) between the absorber and BSF layers. The carrier transport and tunneling process, in such structure, are mainly ensured by electrons. Under the AM1.5G solar spectrum at ambient temperature, we investigated the BSF and the tunneling layer's effects on the solar cell output parameters. An additional study by changing the tunnel dielectric materials from the conventional |
| Sommaire : |
Table of Contents Abstract I IIملخص Table of ContentsIII List of Figures VII List of Tables: XI 1. Chapter 1: Introduction 1 1.1 Background1 1.2 Challenges of the work 3 1.3 Objectives 4 1.4 Scheme of the thesis 4 2. Chapter 2: Basics of solar cells 6 2.1 Introduction6 2.2 Photovoltaic cells working principle 6 2.3 PV solar cells Basics7 2.3.1 Current-voltage characteristic7 2.3.2 Figures of merit 8 2.3.3 Efficiency limiting factor9 2.4 Limits of single junction 11 2.5 Charges generation and recombination mechanisms12 2.5.1 Radiative recombination14 2.5.2 Auger recombination 14 2.5.3 SRH recombination 15 2.6 Surface recombination 16 3. Chapter 3: Passivation of silicon solar cells17 3.1 Introduction17 3.2 Passivation concepts 17 3.2.1 Passivating Contacts17IV 3.2.2 Fundamental Concepts for Passivating Contacts 19 3.2.2.1 Passivating contact concepts19 3.2.2.2 How should be fabricated a passivating contact? 21 3.2.3 Poly-Si Passivating Contacts22 3.2.4 Carrier selective contacts24 3.3 Mainstream silicon PV cells 26 3.4 Advanced silicon solar cells state-of-the-art overview26 3.4.1 Types of crystalline silicon solar cells28 3.4.1.1 Al Back surface field (Al-BSF) 29 3.4.1.2 The passivated emitter rear contact (PERC) solar cell .29 3.4.1.3 Heterojunction solar cells 31 3.4.1.4 Tunneling-oxide passivating contact (TOPC34 4. Chapter 4: General properties of defects in semiconductors37 4.1 Introduction37 4.2 Types of defects 38 4.2.1 Point defects 38 4.2.1.1 Vacancy 38 4.2.1.2 Interstitial 39 4.2.1.3 Substitution 40 4.2.1.4 Anti-site 41 4.2.1.5 Frenkel defect 41 4.2.1.6 Schottky defect 42 4.2.2 Line defects43 4.2.2.1 Edge Dislocations 43 4.2.2.2 Screw Dislocations 44 4.3 Electronic Defect States.44 4.3.1 Classification 44 4.3.1.1 Shallow Defects 45 4.3.1.2 Deep defects45 4.3.2 Definition of a trap or recombination center .46 4.3.2.1 The rate equation 48 4.3.2.2 The capture process .50 4.3.2.3 The emission process 50V 4.3.3 Defect production by Irradiation .51 4.4 Effects of defects .53 4.4.1 Effects on leakage currents53 4.4.2 Effects in lifetime shortening 53 4.4.3 Effects on devices53 4.6 Defects in the |
| En ligne : | http://thesis.univ-biskra.dz/id/eprint/5761 |
Disponibilité (1)
| Cote | Support | Localisation | Statut |
|---|---|---|---|
| TPHY/120 | Théses de doctorat | bibliothèque sciences exactes | Consultable |
