| Titre : | Study of a Metal Insulator -Semiconductor (MIS) solar cell |
| Auteurs : | Maroua Semmari, Auteur ; Mounira Ataoua, Auteur ; Amjad Meftah, Directeur de thèse |
| Type de document : | Monographie imprimée |
| Editeur : | Biskra [Algérie] : Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie, Université Mohamed Khider, 2021 |
| Format : | 1 vol. (161 p.) / couv. ill. en coul |
| Langues: | Anglais |
| Résumé : |
We have investigated two MISsilicon-based solar cells. The first one consists ofAu / SiO2 / n-type c-Si, andin the second one, the anode metal (Au) is replaced by heavily doped ZnO (n+-type) to give (n+-type ZnO / SiO2 / n-type c-Si) structure. The investigation of the thickness variation effect, of the silicon layer in the range [10- 500 µm], showsan optimal thickness of 175 µm for the first cellwith a conversion efficiency ? of ~11.87 %. For the second one, the optimal thickness is 150 µm with a conversion efficiency ? of ~12.50%. An enhancement is notified, particularly in ?? and the conversion efficiency ?, as the anode metal (Au) is replaced by heavily doped ZnO (n+-type).The thickness variation effect of the oxide (SiO2) layer in the range [2-20°A], shows better output parameters for FF and ? ,as the oxide layer becomes thinner. The ?? and ??? , however, display insignificant sensitivity to the oxide layer thickness variation.The optimal value of doping is ?? = 7 × 1015???? for the firstcell with a conversion efficiency ? of ~11.87%, andis ?? = 7 × 1016???? for the second solar cell with a conversion efficiency ?of ~12.558% .The ??? is significantly enhanced as the doping concentration increases for both solar cells. Varying the ZnO layer thickness in the range [0.05-10 µm] brings further improvement to the second cell; a significant enhancement of the ?? is notified leading to a conversion efficiency improvementfrom ~ 11.97% to 13.94%. |
| Sommaire : |
Acknowledgement ..................................................i Dedication ..........................................................................ii Abstract ........................................................................iv List of Figures ................v List of Tables ..........................................................viii List of symbols ......................................ix Table of contents............................................................xi General introduction.................................................... Chapter I: MIS silicon-based solar cell I.1. Introduction....................................................3 I.2. Photovoltaic and solar cells...................................................................3 I.2.1. Working principle of photovoltaic cell.................4 I.2.1.1.Generation of charge carriers due to photon absorption.................................5 I.2.1.2.Separation of photo generated charge carriers........................6 I.2.1.3.Extraction of photogenerated charge carriers..........................................6 I.2.2.Solar radiation.......................................................................7 I.2.3. Equivalent circuit of solar cell.................................................8 I.2.4.Characteristic of a photovoltaic device..........................................10 I.2.4.Basic photovoltaic parameters of the solar cell...............11 I.2.4.1 Short circuit current.............................................................11 I.2.4.2.Open circuit voltage.factor.1power......13 I.2.4.5.Power conversion efficiency...........................................13 I.2.4.6. Quantum efficiency..................................................14xiii I.3. Metal-Insulator-Semiconductor (M-I-S)....14 I.4. TCO-based MIS type solar cell..........................................20 I.5. Conclusion...................................22 Chapter II: Solar cell simulation using SILVACO-ATLAS software II.1. Introduction............................................23 II.2. SILVACO- ATLAS as numerical modelling software.................23 II.3. Application of Silvaco-Atlas in the numerical simulation of the MIS solar cell based on Silicon (general steps)........................................................25 II.3.1.Building the device.....................................25 II.3.2 Defining the Structure..........................................26 II.3.3. Regions.................................................................27 II.3.4. Electrodes............................................29 II.3.5 .Doping.................................................................30 II.3.6. Modifying Parameters................................................30 II.3.7. Numerical Solutions...............................................31 II.3.8 .Obtaining Solutions....................................................31 II.3.9. Results..................................................................32 II.3.10. Luminous........................................................33 II.3.11. Solarcell simulation........................................33 Chapter III: Investigation of the MIS silicon solar cell III.1. Introduction...............................36 III.2. Description of the studied MIS silicon solar cell.....36 III.3.Results and discussion....................................44xiv III.4.Conclusion……………………………………………………………………….….60 General conclusion………………………………………………………………….……63 References…………………………………………………………………………….......66 Abstract…………………………………………………………………………………...71.. |
| Type de document : | Mémoire master |
Disponibilité (1)
| Cote | Support | Localisation | Statut |
|---|---|---|---|
| MPHY/577 | Mémoire master | bibliothèque sciences exactes | Consultable |
