| Titre : | Optimization of indium oxide thin films properties prepared by sol gel spin coating process for optoelectronic applications |
| Auteurs : | Anouar Yahia, Auteur ; Abdallah Attaf, Directeur de thèse ; Hanane Saidi, Directeur de thèse |
| Type de document : | Thése doctorat |
| Editeur : | Biskra [Algérie] : Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie, Université Mohamed Khider, 2020 |
| Format : | 1 vol. (330 p.) / 30 cm |
| Langues: | Anglais |
| Mots-clés: | Thin film,indium oxide,sol-gel,spin coating technique,doping,optical properties,electrical properties. |
| Résumé : |
Indium oxide thin films have been deposited by sol-gel spin coating technique using indium (III) nitrate hydrate, absolute ethanol and acetylacetone as precursor solution, solvent and stabilizer, respectively. The effect of the molar concentration, annealing temperature, titanium doping and cupric doping on the structural, morphological, optical and electrical properties of In2O3 films have been studied. All films have been characterized by multiple techniques such as X-ray diffraction (XRD), UV-Visible spectroscopy, scanning electron microscope (SEM), photoluminescence (PL) spectroscopy, Fourier transform infrared (FTIR) spectroscopy and four probe method to investigate the physical properties of indium oxide films. X-ray diffraction analysis showed that the films are polycrystalline in nature having cubic crystal structure with preferred growth orientation along (222) plane. SEM images show that the films are homogenous, uniform and dense without any pin holes and cracks. The transmittance of In2O3 films was high up to 90% and it is probably related to the good crystalline quality of the films. The optical gap was found to vary between 3.5 and 4.0 eV. The photoluminescence measurements revealed mainly three emission peaks (ultraviolet, blue and green) corresponding to the near band edge (NBE) and defect levels (DL) emissions. The broad ultraviolet luminescence peak 310-420 nm is assigned to NBE emission. The blue and green luminescence are attributed to DL emission. The electrical measurements revealed that prepared Cu doped In2O3 films have a low resistivity (about 1.77×10-3 – 6.34×10-3 (Ω.cm)) which made these films suitable for optoelectronic applications. |
| Sommaire : |
ACKNOWLEDGEMENT i ABSTRACT ........... ii LIST OF FIGURES viii LIST OF TABLES Chapter I: Indium oxide thin films: an overview I.1. Introduction Historical Development of TCOs 4 Opto-electrical properties of TCOs 5 Mechanism behind simultaneous transparency and conductivity 8 I.3. Indium oxide (In2O3): an overview 8 Basics of In2O3 9 Crystal structures of In2O3 10 Electrical and optical properties of In2O3 12 Photoconductivity 13 I.4. Importance of In2O3 thin films 15 I.5. Applications of In2O3 thin films 16 Electronic Displays Optical coatings 16 Magnetic films for data storage 17 Antistatic coatings 17 Solar cells 17 Gas sensors 18 Chapter II: Thin films: Preparation and characterization techniques 19 II.1. Introduction 20 II.2. Thin film preparation techniques 20 Physical deposition techniques 20 II.2.1.1. Evaporation 20 II.2.1.2. Sputtering 21 II.2.1.3. Ion plating 21 Chemical deposition techniques 21 II.2.2.1. Chemical bath deposition (CBD) II.2.2.2. Cathodic deposition 22 II.2.2.3. Anodic oxidation 23 II.2.2.4. Chemical vapor deposition (CVD) 23 II.2.2.5. Sol gel 24 II.3. Characterization techniques 28 X-ray diffraction (XRD) Scanning electron microscope (SEM) 30 Energy dispersive X-ray spectroscopy (EDS or EDX) 32 Photoluminescence spectroscopy 33 Fourier Transform Infrared Spectroscopy (FTIR) 34 UV-Visible spectroscopy 35 Four point probe method 38 Chapter III: Effect of molar concentration on indium oxide thin films properties III.1. Experimental details 41 Preparation of In2O3 films 41 Films characterization 41 III.2. Results and discussion 42 Film thickness study 42 Structural study 43 Surface morphological study 47 Optical study 50 Electrical study 56 III.3. Conclusion 57 Chapter IV: Influence of annealing temperature on indium oxide thin films properties 59 IV.1. Experimental details 60 Preparation of In2O3 films 60 Films characterization IV.2. Results and discussion 61 Thickness study 61 Structural study 62 Optical study 64 Electrical study 68 IV.3. Conclusion 69 Chapter V: Impact of titanium doping on indium oxide thin films properties 70 V.1. Experimental details 71 Preparation of In2O3 films 71 Films characterization 71 V.2. Results and discussion 71 Structural study 71 Optical study 74 Electrical study 79 V.3. Conclusion . 80 Chapter VI: Structural, optical and electrical properties of Cu-doped In2O3 thin films VI.1. Experimental details 82 Preparation of In2O3 films 82 Films characterization VI.2. Results and discussion 83 Structural study 83 Surface and morphological study 85 Optical study 87 Electrical study 89 VI.3. Conclusion 91 CONCLUSION AND FUTURE OUTLOOK 92 REFERENCES .... 95 List of publications and conferences 11 |
| En ligne : | http://thesis.univ-biskra.dz/4778/1/Yahia%20Anouar%20Thesis.pdf |
Disponibilité (1)
| Cote | Support | Localisation | Statut |
|---|---|---|---|
| TPHY/95 | Théses de doctorat | bibliothèque sciences exactes | Consultable |
