| Titre : | Numerical Simulation of InAs/GaAs Quantum well and Quantum dots solar cells |
| Auteurs : | Madani Labed, Auteur |
| Type de document : | Monographie imprimée |
| Editeur : | Biskra [Algérie] : Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie, Université Mohamed Khider, 2019 |
| Format : | 1 vol. (60 p.): couv. ill. en coul / 29 cm |
| Langues: | Français |
| Résumé : |
Abstract
In this dissertation InAs/GaAs quantum solar cells is studied. First with a quantum well conception (QWSCs) and secondly with quantum dots (QDSCs). For the InAs/GaAs QW, we used MATLAB to develop our own program to solve consistently the classical drift-diffusion model with Schrödinger-Poisson model. The QWSC provided a cell efficiency of 18.52% compared with 16.78% for the classical one. The InAs/GaAs QDSC was studied using Silvaco Atlas simulator. The study is divided into two parts: ideal and real case. The effects of the number of quantum dots (QDs) layers and the doping of QDs on electrical properties of QDSC are investigated. A highest efficiency of 43.05 % was obtained in the ideal case. However experimental works have reported a conversion efficiency of 9.1%. Taking into account the presence of discrete electron traps and valence band tail, we were able to obtain a cell efficiency of 9.4% in agreement with experimental reports. In addition, it was possible to improve the cell efficiency to 11.29% by optimizing the number and the doping of QDs layers, to 2-layers and 1 × 1019 |
| Sommaire : |
Table of contents
Acknowledgement ................................................................................................................. ii Dedication ................................................................................................... ملخص iv Abstract ................................................................................................................. v Table of contents .................................................................................................................. vi Introduction ..........................................................................................................................1 References .............................................................................................................................4 Chapter 1 : MQW solar cell principal and 1D simulation by MATLAB .......................................5 1.1 Introduction ......................................................................................... 6 1.2 Quantum Well materials ............................................................................ 7 1.2.1 Epitaxial growth of Quantum Well (QW) ....................................................................... 7 1.2.2 Quantum-confined structures ........................................................................................ 8 1.3 Structure of Quantum Well solar cell .................................................................................. 10 1.4 Modeling and simulation of QW solar cell .......................................................................... 10 1.4.1 Classical Drift-Diffusion model ..................................................................................... 11 1.4.2 Quantum model ........................................................................................................... 17 1.5 Application for InAs/GaAs p-i-n MQWSC ............................................................................ 22 1.6 Conclusion ........................................................................................................................... 28 References ........................................................................................................................... 29 Chapter 2 : Numerical Modeling of Quantum dots solar cell by Silvaco-Atlas ......................... 30 2.1 Introduction ......................................................................................................................... 31 2.2 Researches and development of QDSCs ............................................................................. 32 2.3 Physical mechanism of QDs solar cell.................................................................................. 37 2.3.1 QDSC with intermediate band ...................................................................................... 38 2.3.2 QDSCs with multiple exciton generation ...................................................................... 39 2.4 Structure of QDSC ................................................................................................................ 40 2.5 Simulation setup in Silvaco Atlas ......................................................................................... 41 2.5.1 Introduction .................................................................................................................. 41 2.5.2 Simulation steps for standard solar cell ....................................................................... 48 vii 2.5.3 Simulation of QDSC ...................................................................................................... 50 References: .......................................................................................................................... 56 Chapter 3 : results and discussion ......................................................................................... 58 3.1 Introduction ......................................................................................................................... 59 3.2 Ideal QDs solar cell .............................................................................................................. 59 3.2.1 Effect of number of quantum dots layers .................................................................... 61 3.2.2 Effect of doping QD layers ............................................................................................ 62 3.3 Real InAs/GaAs QDs solar cell.............................................................................................. 63 3.4 Optimization of the InAs/GaAs QDSC .................................................................................. 70 3.4.1 Effect of doping QDs on the real J-V characteristic ...................................................... 70 3.4.2 Effect of using GaP layers in intrinsic region ................................................................ 71 3.4.3 Effect of number of QDs layers .................................................................................... 72 3.5 Conclusion ........................................................................................................................... 75 References ........................................................................................................................... 76 Conclusion ........................................................................................................................... 78 |
Disponibilité (1)
| Cote | Support | Localisation | Statut |
|---|---|---|---|
| MPHY/460 | Mémoire master | bibliothèque sciences exactes | Consultable |
