| Titre : | Simulation of passivated area effect On silicon solar cell |
| Auteurs : | Djemaa Attafi, Auteur ; Rami Boumaraf, Directeur de thèse |
| Type de document : | Monographie imprimée |
| Editeur : | Biskra [Algérie] : Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie, Université Mohamed Khider, 2018 |
| Format : | 1 vol. (66 p.) / 30 cm |
| Langues: | Anglais |
| Mots-clés: | Passivation,back surface field,Tunneling effect,Silicon crystalline,SiO2,Numerical Simulation,Silvaco Atlas |
| Résumé : |
Surface passivation in crystalline silicon solar cells is one of the important key technologies that can achieve high efficiency by reducing the surface recombination and increasing the collection of photogenerated carriers. In this work, a numerical simulation of 3 silicon based solar cells has been done using Silvaco-Atlas software. Each cell represents a type of passivation. The carried out study in this work proved that compared to the reference cell (simple pn structure), the passivation by back surface field effect (BSF) gives good results, where we obtain high conversion efficiency of 23.71%. Also, the highest conversion efficiency (26.45%) was achieved by using a tunneling SiO2 layer between the n-Si layer and the n+/Si back contacts. Where, the tunneling layer has a beneficial effect only if it has a thickness less than1.6nm. |
| Sommaire : |
Table of Contents Abstract ..................................................................... II Acknowledgements ............................................................................................ VI Dedication .......................................................................... VII List of Tables ............................................................................................. XI List of Figures ................................................................................. XII General introduction ............................................................................. X Chapter 1solar cells 1.1 Introduction: ....................................................................... 1 1.2 Solar Radiation ............................................................................ 1 1.3 History of Solar Cells .................................................................... 3 1.4 Three generations of solar cells ........................................................... 4 1.4.1 First generation .................................................................... 4 1.4.2 Second generation ............................................................... 4 1.4.3 Third generation ............................................................... 5 1.5 Solar cells ................................................................... 5 1.6 How does a solar cell work? ...................................................... 6 1.7 Device parameters ........................................................ 7 1.7.2 Open circuit voltage .................................................... 8 1.7.3 The fill factor FF.................................................. 9 1.7.4 Conversion efficiency ................................................................ 10 1.7.5 Quantum Efficiency ............................................................... 10 1.7.6 Spectral response ........................................................... 12 1.8 Optical properties ..................................................................... 13 1.8.1 The antireflection coating .......................................... 13 IX 1.8.2 Surface texturing ............................................................16 1.8.3 Light trapping ........................................................................ 17 Chapter 2 Materials used and passivation 2.1 Introduction: ............................................................................................. 18 2.2 General properties of silicon ...................................................................... 18 2.2.1 Crystal structure ........................................................................ 18 2.2.2 Electrical properties ............................................................. 19 2.2.3 Silicon doping .................................................................... 20 2.2.3.1 N-type doped silicon ..................................................................... 20 2.2.3.2 P-type doped silicon ..................................................................... 21 2.2.4 Si production: from silica to virtually pure Si ................................................ 22 .2.4.1 Carbothermic reduction .................................................................. 23 2.2.4.2 Purification by chemical routes ‘the Siemens process’: ..................................... 23 2.2.5 Crystallization of Silicon: ........................................................... 24 2.2.5.1 Czochralski growth (CZ): .................................................... 24 2.2.5.2 Float-zone silicon (FZ): .................................................... 25 2.3 Silicon dioxide (SiO2) ......................................................................... 26 2.3.1 Properties of SiO2 ..................................................................... 26 2.3.2 Applications of SiO2 in fabrication ................................................... 26 2.4 Passivation .......................................................................... 28 2.4.1 Passivation mechanisms ................................................ 29 2.4.1.1 The first approach of passivation ............................................ 29 2.4.1.2 The second approach of passivation ......................................... 31 2.4.2 Materials for passivation ............................................................ 32 2.4.2.1 Silicon oxide SiO2 ......................................................... 32 2.4.2.2 Silicon nitride SiNx ........................................................ 33 2.4.2.3 Aluminium oxide Al2O3 ........................................................... 34 X 2.4.3 Methods of passivation in solar cells .............................................................. 34 2.4.3.1 SiO2 and SiNx deposits by PECVD ........................................................................... 34 2.4.3.2 AL2O3 deposition by ALD ......................................................................................... 35 Chapter 3 Results and discussion 3.1 Introduction ........................................................................................................... 38 3.2 Simulation Parameters ................................................................................. 38 3.2.1 Structure Specification ..............................................................................38 3.2.1.1 The simple structure .............................................................................. 39 3.2.1.2 Structure with BSF .............................................................................. 41 3.2.1.3 Structure with chemical passivation (SiO2 layer) ..................................................... 42 3.2.2 Input Parameters value ................................................................................... 44 3.2.3 Physical models .............................................................................................. 45 3.3 Results and discussions ................................................................................. 47 3.3.1 Simple structure .............................................................................................. 47 3.3.1.1 Without UST model ....................................................................................... 47 3.3.1.2 With UST model ..................................................................................... 48 3.3.2 Structure with BSF (n+ layer) ......................................................................... 50 3.3.2.1 Without UST model ................................................................................ 50 3.3.2.1.1 Doping concentration effect of the n+ layer ................................................... 52 3.3.2.1.2 Thickness effect of the n+ layer .............................................................. 54 3.3.2.2 With UST model ................................................................................... 56 3.3.2.2.1 Doping concentration effect of the n+ layer ..................................................... 58 3.3.2.2.2 Thickness effect of the n+ layer ....................................................... 60 3.3.3 Structure with chemical passivation (SiO2 layer) ........................................... 62 3.3.3.1 Thickness effect of the SiO2 layer .......................................................... 63 3.3.3.2. Position effect of SiO2 layer .......................................................... 64 3.4 Conclusion .......................................................................................... 66 |
| Type de document : | Mémoire master |
Disponibilité (1)
| Cote | Support | Localisation | Statut |
|---|---|---|---|
| MPHY/434 | Mémoire master | bibliothèque sciences exactes | Consultable |
