Titre : | Study of a tandem solar cell based on Indium Gallium Nitride/Silicon (InGaN/Si) heterojunction |
Auteurs : | Lakhdar Sek, Auteur ; Amjad Meftah, Directeur de thèse |
Type de document : | Monographie imprimée |
Editeur : | Biskra [Algérie] : Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie, Université Mohamed Khider, 2018 |
Format : | 1 vol. (80 p.) / 30 cm |
Langues: | Anglais |
Mots-clés: | solar cell,heterojunction,tandem,numerical simulation,SILVACO-ATLAS,Indium Gallium Nitride/Silicon. |
Résumé : | We presented a detailed description of our study carried on a tandem solar cell, based on Indium Gallium Nitride (InGaN)/ Silicon (Si) heterojunction. The study is investigated under the standard global solar spectrum (AM1.5G) by numerical simulation using, as a tool, the SILVACO-ATLAS software. This latter allowed us to calculate the device performance parameters such as the current density-voltage and the power-voltage characteristics, (J-V) and (P-V) respectively, the short-circuit current density (J_sc), the open-circuit voltage (V_oc), the maximum power (P_max) delivered by the cell, the fill factor (FF), and the conversion efficiency (η). The photovoltaic parameters of the investigated solar cell show a satisfied value of 20.72% for the conversion efficiency. Furthermore, the thickness increase, from 5µm to 20µm, of the bottom sub-cell base layer brings an improvement to J_SC and P_max which leads to an amelioration of the conversion efficiency η from20.72 % to 25.59 %. The improvement of η achieved by the tandem cell configuration is significant relatively to the single solar cellbased on Si or on heterojunction InGaN/Si. |
Sommaire : |
Summary:
Dedication……………………………………………………………………..…… I Acknowledgment………………………………………………………..………… II Abstract………………………………………………………………………..….. III Figures list................................IV Tables list……………………………………………………………….………… VI Table of symbols……………………………………………………..………….. VII General introduction……………………………………………………..………..02 Chapter I: photovoltaic conversion I-1 Introduction………………………………………………………..…………….06 I-2 The sun…………………………………………………………………………..06 I-2-1 General characteristics of the sun…………………………………..………06 a- Atmosphere effects…………………………………………..…06 b- Absorption into the atmosphere…………………………….… 07 c- Air mass………………………………………………… …… 08 d- The solar spectrum………………………………………...……09 e- Stream of photons………………………………………………10 f- Spectral irradiation………………………………………..…… 10 g- Radiation of black body…………………………………….… 11 I-3 The solar cell…………………………………………………………………… 13 I-3-1 Definition……………………………………………………….……… 13 I-3-2 The PN junction ………………………………………………..……… 13. I-3-3 Operation of a photovoltaic cell…………………………………...…… 14 I-3-4 The architecture of a photovoltaic cell…………………………….…… 15 I-3-5 Solar cell parameters……………………………………………….…… 18 I-4 The different photovoltaic sectors…………………………………………..….. 21 I-5 Conclusion……………………………………………………………………… 23 Chapter II: Indium gallium nitride alloy (InGaN) and InGaN-based solar cell II-1 Introduction……………………………………………………………….……25 II-2 Semiconductors materials III-V………………………………………….…….25 II-2-1 Structural features…………………………………………………………27 II-2-2 Electrical properties ......................................29 a) Gap of forbidden energy in nitrides……………………………..29 1- Evolution of the energy gap in InGaN…………………..31 b) Diffusion length………………………………………………….31 II-2-3 Optical properties……………………………………………………………..32 a) Refractive index…………………………………………..……..32 b) Absorption…………………………………………………..…..34 1. Studies of the absorption coefficient………………...…..34 II-3 Photovoltaic cell made from InGaN………………………………………….…35 II-3-1 Simple junction………………………………………………………………35 II-3-2 Multi junction…………………………………………………………..……37 II-3-3 Heterojunction…………………………………………………………….…43 II-4 Conclusion………………………………………………………………..……..44 Chapter III: the SILVACO- ATLAS simulator III-1Introduction………………………………………………………………………46 III-2 Presentation of the Silvaco program package…………………………...………46 III-3 SILVACO-ATLAS ……………………………………………………..………47 III-4 Inputs and Outputs in Silvaco-Atlas…………………………………………….49 III-4-1 Deckbuild……………………………………………………………………50 III-4-2 TonyPlot……………………………………………………………….……50 III-5 Programming logic………………………………………………………………51 III-5-1 Specification of structure ………………………………………………...…53 III-5-2 Specification of material models……………………………………………57 III-5-3 Solution method………………………………………………………..……60 III-5-4 Specification of solutions………………………………………………...…61 III-5-5 Analysis of results…………………………………………………….…….61 III-6 General contour construction of Atlas……………………………………..……62 III-7 Conclusion ………………………………………………………………...……64 Chapter IV: Study of a tandem solar cell based on heterojunction (InGaN/Si) IV-1 Introduction……………………………………………………………….……..66 IV-2 Studied cell………………………………………………………………...……66 IV-3 Results and discussion……………………………………………………..……72 IV-4 Conclusion………………………………………………………………………81 General conclusion………………………………………………………………….83 References |
Type de document : | Mémoire master |
Disponibilité (1)
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